收藏本站
VUI 30-12 N1
Transistor T
Ratings
Symbol
V CES
V GES
I C25
I C80
Definitions
collector emitter voltage
DC gate voltage
collector current
Conditions
continuous
DC
DC
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
min.
-20
typ.
max.
1200
+20
95
65
Unit
V
V
A
A
V CE(sat)
V GE(th)
I CES
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
I C = 20 A; V GE = 15 V
I C = 2 mA; V GE = V CE
V CE = V CES ; V GE = 0 V
T VJ = 25°C
T VJ = 125°C
T VJ = 25°C
T VJ = 25°C
T VJ = 125°C
4.5
1.7
1.9
1.8
2.0
6.5
1.6
V
V
mA
mA
I GES
t d(on)
t r
t d(off)
t f
E on
E off
C ies
Q Gon
I CM
V CEK
gate emitter leakage current
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
input capacitance
total gate charge
reverse bias safe operating area
V CE = 0 V; V GE = ±20 V
inductive load T VJ = 125°C
V CE = 600 V; I C = 20 A
V GE = ±15 V; R G = 22 W ; L = 100 μH
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 600 V; V GE = 15 V; I C = 50 A
RBSOA; V GE = ±15 V; R G = 22 W ; L = 100 μH
clamped inductive load;          T VJ = 125°C
400
100
70
500
70
3.0
2.2
3.3
240
100
< V CES -L S · d I /dt
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
A
V
t SC
(SCSOA)
R thJC
short circuit safe operating area
thermal resistance junction to case
V CE = V CES ; V GE = ±15 V;
R G = 22 W ; non-repetitive
T VJ = 125°C
10
0.3
μs
K/W
R thJH
thermal resistance case to heatsink
with heat transfer paste, see mounting instructions
0.6
K/W
Diodes D1 - D4
Symbol
Conditions
Ratings
min.
typ.
max.
V RRM
I F25
I F80
repetitive reverse voltage
collector current
T VJ = 25°C
T C = 25°C
T C = 80°C
1200
40
25
V
A
A
I R
V F
reverse current
forward voltage
V R = V RRM
V R = 0.8 · V RRM
I F = 20 A
T VJ = 25°C
T VJ = 125°C
T VJ = 25°C
T VJ = 125°C
2
2.2
1.9
0.75
2.4
mA
mA
V
V
I RM
t rr
R thJC
R thJH
reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
I F = 30 A; di F /dt = -250 A/μs
V R = 540 V
per diode
with heat transfer paste
T VJ = 125°C
T VJ = 25°C
T VJ = 25°C
16
400
2.6
1.3
A
ns
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2013 IXYS All rights reserved
20130111b
2-3
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
VUM24-05N MOSFET STAGE BOOST 500V V1-B
VUM25-05E MOSFET STAGE BOOST 500V V1-A
VUM33-05N MOSFET STAGE BOOST 500V V1-B
VUM85-05A MOSFET STAGE BOOST 500V V2-PACK
W-HT-2285 TOOL EXTRACTOR HT-2285 .062
XY2B-1006 ATTACHMENT FOR XG2A
YNT-1614 RATCH TERM SPLICING TOOL SIZE=2
0011201286 ARBOR PRESS W/TOOLING FOR 71156
相关代理商/技术参数
VUI72-16NOXT 功能描述:桥式整流器 Standard Rectifier Bridge+Brake Unit RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube
VUI9-06N7 功能描述:RECT MOD PFC 3PH 600V ECO-PAC1 RoHS:是 类别:半导体模块 >> 桥式整流器 系列:- 标准包装:10 系列:- 电压 - 峰值反向(最大):1000V 电流 - DC 正向(If):35A 二极管类型:单相 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间(trr):- 安装类型:底座安装 封装/外壳:ISOTOP 包装:托盘 供应商设备封装:ISOTOP?
VUM2405 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Power MOSFET Stage for Boost Converters
VUM24-05 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Power MOSFET Stage for Boost Converters
VUM24-05N 功能描述:分立半导体模块 24 Amps 500V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
VUM25-05 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Rectifier Module for Three Phase Power Factor Correction
VUM25-05E 功能描述:MOSFET 25 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
VUM33-05 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Power MOSFET Stage for Boost Converters